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  SBT100-16JS no. a0442-1/3 applications ? high frequency rectification (switching regulators, converters, choppers). features ? tj=150 c. ? low forward voltage (v f max=0.88v). ? short reverse recovery time. ? low switching noise. ? high reliability due to highly reliable planar structure. ? attachment workability is good by mica-less package. specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit repetitive peak reverse voltage v rrm 160 v nonrepetitive peak reverse surge voltage v rsm 165 v average output current i o 50hz resistive load, sine wave tc=78 c1 0 a surge forward current i fsm 50hz sine wave, 1 cycle 100 a junction temperature tj --55 to +150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit reverse voltage v r i r =2ma, tj=25 c* 160 v forward voltage v f i f =5a, tj=25 c* 0.82 0.88 v reverse current i r v r =160v, tj=25 c* 20 200 m a interterminal capacitance c v r =10v, tj=25 c* 100 pf thermal resistance rth(j-c) junction-case : smoothed dc 4.0 c / w note) * : value per element ordering number : ena0442 82306 / 61506sd ms im tb-00002384 SBT100-16JS schottky barrier diode (twin type cathode common) 160v, 10a rectifier sanyo semiconductors data sheet any and all sanyo semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo semiconductor representative nearest you before usingany sanyo semiconductor products described or contained herein in such applications. sanyo semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor products described or contained herein. tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan http://semicon.sanyo.com/en/network
SBT100-16JS no. a0442-2/3 package dimensions electrical connection unit : mm 7525-001 anode anode cathode 1 : anode 2 : cathode 3 : anode sanyo : to-220ml(ls) 0.75 0.7 123 10.0 3.5 7.2 16.0 14.0 3.6 1.2 1.6 2.55 2.55 4.5 2.8 2.4 3.2 0 2.5 2.0 1.0 0.5 1.5 5 7 2 3 2 0.1 1.0 5 7 3 2 3 10 it10962 0 1.0 2 5 7 3 3 2 10 5 7 3 2 20 40 60 100 140 80 120 160 180 (3) (1) 0 0 8 12 20 16 10 14 18 6 2 4 214 612 10 8 4 it10964 (4) (3) (1) 0 0 6 4 8 16 12 2 14 10 140 180 100 60 160 120 80 40 20 (2) (4) (2) tj=150 c 25 c it10963 it10965 tj=150 c typ 125 c typ 100 c typ 75 c typ 100 5 7 2 i f -- v f i r -- v r p f (av) -- i o p r (av) -- v rm forward voltage, v f -- v forward current, i f -- a reverse voltage, v r -- v reverse current, i r -- ma peak reverse voltage, v rm -- v average reverse power dissipation, p r (av) -- w average output current, i o -- a average forward power dissipation, p f (av) -- w 180 360 q 360 180 360 v r (1)rectangular wav e q =300 (2)rectangular wav e q =240 (3)rectangular wav e q =180 (4)sine wav e q =180 (1)rectangular wav e q =60 (2)rectangular wav e q =120 (3)rectangular wav e q =180 (4)sine wav e q =180 sine wave sine wave q 360 v r rectangular wave rectangular wave represented by max
SBT100-16JS no. a0442-3/3 ps (4) (3) 02 100 170 150 130 90 70 50 30 4812 10 14 6 (2) (1) it10966 2 100 2 3 3 5 2 5 7 357 10 23 57 100 1.0 f=100khz it10967 tc -- i o case temperature, tc -- c average output current, i o -- a (1)rectangular wav e q =60 (2)rectangular wav e q =120 (3)rectangular wav e q =180 (4)sine wav e q =180 q 360 rectangular wave 180 360 sine wave c -- v r interterminal capacitance, c -- pf reverse voltage, v r -- v 23 7 0.001 3 5 7 1.0 2 3 5 7 10 2 5237 5237 52 2 37 5 0.01 0.1 1.0 10 id01058 rth(j-c) -- t transient thermal resistance, rth(j-c) -- c / w time, t -- s 0.01 23 7 7 0.1 0 52 23 37 1.0 5 40 120 100 80 60 20 id01041 i fsm -- t surge forward current, i fsm (peak) -- a time, t -- s i s 20ms t current waveform 50hz sine wave this catalog provides information as of june, 2006. specifications and information herein are subject to change without notice. specifications of any and all sanyo semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo semiconductor co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo semiconductor co., ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. sanyo semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.


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